PHP110NQ06LT 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

PHP110NQ06LT

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

PHP110NQ06LT

N-channel TrenchMOS logic level FET

120

Ider

(%)

80

03aq01

120

Pder

(%)

80

03aa16

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

103

ID

Limit RDSon = VDS /ID

(A)

102

DC

10

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ap94

t p = 10 μs

1 ms

10 ms

100 ms

1s

1

1

10

102

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PHP110NQ06LT_2

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 4 March 2010

© NXP B.V. 2010. All rights reserved.

3 of 13

Share Link: