M5M5V4R08J-20 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M5M5V4R08J-20 Datasheet PDF : 12 Pages
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MITSUBISHI LSIs
M5M5V4R08J-12,-15,-20
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
(2)READ CYCLE
Symbol
tCR
ta(A)
ta(S)
ta(OE)
tdis(S)
tdis (OE)
ten(S)
ten (OE)
tv(A)
tPU
tPD
Parameter
M5M5V4R08J -12
Min
Max
Read cycle time
12
Address access time
Chip select access time
Output enable access time
Output disable time after S high
Output disable time after OE high
12
12
6
0
6
0
6
Output enable time after S low
0
Output enable time after OE low
0
Data valid time after address change
3
Power-up time after chip selection
0
Power-down time after chip selection
12
Limits
M5M5V4R08J -15
Min
Max
15
15
15
8
0
7
0
7
0
0
3
0
15
M5M5V4R08J -20 Unit
Min
Max
20
ns
20
ns
20 ns
10
ns
0
8 ns
0
8 ns
0
ns
0
ns
3
ns
0
ns
20
ns
(3)WRITE CYCLE
Symbol
Parameter
tCW
Write cycle time
tw(W)
Write pulse width
tsu(A)1 Address setup time(W)
tsu(A)2 Address setup time(S)
tsu(S)
Chip select setup time
tsu (D)
Data setup time
th(D)
Data hold time
trec(W) Write recovery time
tdis (W)
tdis (OE)
ten (W)
Output disable time after W low
Output disable time after OE high
Output enable time after W high
ten(OE) Output enable time after OE low
tsu(A-WH) Address to W High
Limits
M5M5V4R08J -12 M5M5V4R08J -15 M5M5V4R08J -20 Unit
Min
Max
Min
Max
Min
Max
12
15
10
12
0
0
0
0
10
12
6
7
0
0
0
0
0
6
0
0
6
0
0
0
0
0
10
12
20
15
0
0
15
8
0
0
7
0
7
0
0
0
15
ns
ns
ns
ns
ns
ns
ns
ns
8
ns
8
ns
ns
ns
ns
MITSUBISHI
ELECTRIC
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