PM6670AS(2008) 查看數據表（PDF） - STMicroelectronics

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PM6670AS
(Rev.:2008)

Complete DDR2/3 memory power supplies controller

STMicroelectronics 

Electrical characteristics

PM6670AS

Table 6.

Symbol

Electrical characteristics (continued)

TA = -25 °C to 85 °C , VCC = AVCC = +5 V and LDOIN connected to VDDQ output if not

otherwise specified (1)

Parameter

Test condition

Min Typ Max Unit

Current limit and zero crossing comparator

ICSNS CSNS input bias current

Comparator offset

Rsense = 1 kΩ

Positive current limit threshold

VPGND - VCSNS

Fixed negative current limit

threshold

VZC,OFFS

Zero crossing comparator

offset

90

100 110 µA

-6

6

mV

100

mV

110

mV

-11

-5

1

mV

High and low side gate drivers

HGATE driver on-resistance

LGATE driver on-resistance

HGATE high state (pull-up)

HGATE low state (pull-down)

LGATE high state (pull-up)

LGATE low state (pull-down)

2.0

3

1.8

2.7

Ω

1.4

2.1

0.6

0.9

UVP/OVP protections and PGOOD SIGNAL (SMPS only)

OVP Over voltage threshold

UVP Under voltage threshold

Power-good upper threshold

PGOOD

Power-good lower threshold

IPG,LEAK PG leakeage current

VPG,LOW PG low-level voltage

Soft-start section (SMPS)

PG forced to 5 V

IPG,SINK = 4 mA

112

115 118

67

70

73

%

107

110 113

86

90

93

1

µA

150 250 mV

Soft-start ramp time

(4 steps current limit)

Soft-start current limit step

2

3

4

ms

25

µA

Soft-end section

VDDQ discharge resistance

in non-tracking discharge

mode

VTT discharge resistance in

non-tracking discharge mode

VTTREF discharge

resistance in non-tracking

discharge mode

15

25

35

Ω

15

25

35

1

1.5

2

kΩ

10/54

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