PMBFJ113 查看數據表（PDF） - NXP Semiconductors.
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PMBFJ113 Datasheet PDF : 9 Pages
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NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
7. Static characteristics
Table 6. Static characteristics
Tj = 25 C.
Symbol Parameter
IGSS
gate-source leakage current
IDSS
drain-source leakage current
PMBFJ111
PMBFJ112
PMBFJ113
V(BR)GSS
VGSoff
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ111
PMBFJ112
PMBFJ113
RDSon
drain-source on-state resistance
PMBFJ111
PMBFJ112
PMBFJ113
8. Dynamic characteristics
Conditions
VGS = 15 V; VDS = 0 V
VGS = 0 V; VDS = 15 V
VGS = 0 V; VDS = 15 V
VGS = 0 V; VDS = 15 V
IG = 1 A; VDS = 0 V
ID = 1 A; VDS = 5 V
ID = 1 A; VDS = 5 V
ID = 1 A; VDS = 5 V
VGS = 0 V; VDS = 0.1 V
VGS = 0 V; VDS = 0.1 V
VGS = 0 V; VDS = 0.1 V
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
Ciss
input capacitance
Crss
feedback capacitance
Switching times; see Figure 2
VDS = 0 V; VGS = 10 V; f = 1 MHz
VDS = 0 V; VGS = 0 V; f = 1 MHz; Tamb = 25 C
tr
rise time
ton
turn-on time
tf
fall time
toff
turn-off time
[1] Test conditions for switching times are as follows:
VDD = 10 V, VGS = 0 V to VGSoff (all types);
VGSoff = 12 V, RL = 750 (PMBFJ111);
VGSoff = 7 V, RL = 1550 (PMBFJ112);
VGSoff = 5 V, RL = 3150 (PMBFJ113).
Min Typ Max Unit
-
-
1 nA
20 -
-
mA
5
-
-
mA
2
-
-
mA
40 -
-
V
10 -
5 -
3 -
3 V
1 V
0.5 V
-
-
30
-
-
50
-
-
100
Min Typ Max Unit
-
6
-
pF
-
22 28 pF
-
3
-
pF
[1] -
6
-
ns
[1] -
13 -
ns
[1] -
15 -
ns
[1] -
35 -
ns
PMBFJ111_112_113
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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