Philips Semiconductors
NPN high-voltage transistors
Product specification
PMSTA42; PMSTA43
FEATURES
• High current (max. 500 mA)
• High voltage (max. 200 V).
APPLICATIONS
• High-voltage switching in telephony applications.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package. handbook, halfpage
3
PNP complements: PMSTA92 and PMSTA93.
3
MARKING
TYPE NUMBER
PMSTA42
PMSTA43
MARKING CODE(1)
∗1D
∗1E
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
1
Top view
1
2
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
PMSTA42
PMSTA43
collector-emitter voltage
PMSTA42
PMSTA43
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
300
V
−
200
V
−
300
V
−
200
V
−
6
V
−
100
mA
−
200
mA
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 May 21
2