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T200EN

100 V N-channel Trench MOSFET

NXP Semiconductors. 

PMT200EN

100 V N-channel Trench MOSFET

25 October 2012

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223

(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

• Logic-level compatible

• Very fast switching

• Trench MOSFET technology

1.3 Applications

• Relay driver

• LED backlight driver

• Low-side loadswitch

• Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s

VGS = 10 V; ID = 1.5 A; Tj = 25 °C

Min Typ Max Unit

-

-

100 V

-20 -

20

V

[1]

-

-

3.3 A

-

190 235 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

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