T200EN 查看數據表（PDF） - NXP Semiconductors.
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T200EN Datasheet PDF : 13 Pages
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
10
VGS
(V)
8
aaa-005469
VDS
ID
6
4
2
0
0
2
4
6
8
QG (nC)
ID = 1.5 A; VDS = 80 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
3.5
IS
(A)
3.0
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
aaa-005470
2.5
2.0
Tj = 150 °C
Tj = 25 °C
1.5
1.0
0.5
VGS = 0 V
0
0.0
0.4
0.8
1.2
VSD (V)
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
PMT200EN
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
25 October 2012
© NXP B.V. 2012. All rights reserved
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