PN4416 查看數據表（PDF） - Philips Electronics
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PN4416 Datasheet PDF : 9 Pages
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Philips Semiconductors
N-channel field-effect transistor
Product specification
PN4416; PN4416A
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0.
SYMBOL
PARAMETER
Cis
input capacitance
Cos
output capacitance
Crs
feedback capacitance
gis
common source input conductance
gfs
common source transfer conductance
grs
common source feedback conductance
gos
common source output conductance
Vn
equivalent input noise voltage
CONDITIONS
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 Hz
MIN.
−
−
−
−
−
−
4
−
−
−
−
−
TYP.
−
−
−
−
−
5.2
5
−8
−100
−
−
5
MAX.
4
2
0.8
100
1
−
−
−
−
75
100
−
UNIT
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
handbook,2h5alfpage
I DSS
(mA)
20
MRC168
15
10
5
0
0
2
VDS = 15 V; Tj = 25 °C.
4
6
–VGS(off) (V)
Fig.2 Drain current as a function of
gate-source cut-off voltage; typical values.
handbook, 1h0alfpage
Yfs
(mS)
8
MRC169
6
4
2
0
0
2
VDS = 15 V; Tj = 25 °C.
4
6
–VGS(off) (V)
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
December 1997
4
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