PN323 查看數據表（PDF） - Panasonic Corporation
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PN323 Datasheet PDF : 3 Pages
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PIN Photodiodes
PNZ323 (PN323)
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 900 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
VR
30
V
PD
100
mW
Topr
–30 to +85
˚C
Tstg – 40 to +100 ˚C
4.6±0.2
Chip
2.3
Unit : mm
1.32
2- 0.6±0.1
0.5
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ID
VR = 10V
5
50 nA
Photo current
IL
VR = 10V, L = 1000 lx*1
55
µA
Sensitivity to infrared emitters SIR*2 VR = 5V, H = 0.1mW/cm2
4.5 6
µA
Peak sensitivity wavelength
λP
VR = 10V
900
nm
Response time
tr, tf*3 VR = 10V, RL = 1kΩ
50
ns
Response time
tr, tf*3 VR = 10V, RL = 100kΩ
5
µs
Capacitance between pins
Ct
VR = 0V, f = 1MHz
70
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Light source : λ = 940 nm
*3 Switching time measurement circuit
λP = 900nm
Sig.IN
50Ω
VR = 10V
(Input pulse)
Sig.OUT
(Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
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