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AT49BV008-12TC 查看數據表(PDF) - Atmel Corporation

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AT49BV008-12TC
Atmel
Atmel Corporation Atmel
AT49BV008-12TC Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Features
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 110 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 30 µs/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV/LV008 is a 3-volt-only in-system Flash Memory device. Its 8 megabits of
memory is organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s
advanced nonvolatile CMOS technology, the device offers access times to 110 ns
with power dissipation of just 90 mW over the commercial temperature range. When
the device is deselected, the CMOS standby current is less than 50 µA.
(continued)
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
Data Inputs/Outputs
No Connect
TSOP Top VIew
Type 1
A16 1
A15 2
A14 3
A13 4
A12 5
A11 6
A9 7
A8 8
WE 9
RESET 10
NC 11
RDY/BUSY 12
A18 13
A7 14
A6 15
A5 16
A4 17
A3 18
A2 19
A1 20
40 A17
39 GND
38 NC
37 A19
36 A10
35 I/O7
34 I/O6
33 I/O5
32 I/O4
31 VCC
30 VCC
29 NC
28 I/O3
27 I/O2
26 I/O1
25 I/O0
24 OE
23 GND
22 CE
21 A0
8-Megabit
(1M x 8)
3-volt Only
Flash Memory
AT49BV008
AT49LV008
AT49BV/LV008
8-Megabit 1M x
8 3-volt Only
Rev. 1043A–03/98
1

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