AT49BV008-12TC 查看數據表（PDF） - Atmel Corporation

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AT49BV008-12TC

8-Megabit (1M x 8) 3-volt Only Flash Memory

Atmel Corporation 

AC Read Characteristics

Symbol

tACC

tCE(1)

tOE(2)

tDF(3)(4)

tOH

tRO

Parameter

Address to Output Delay

CE to Output Delay

OE to Output Delay

CE or OE to Output Float

Output Hold from OE, CE or Address,

whichever occurred first

RESET to Output Delay

AC Read Waveforms

ADDRESS

AT49LV008-11

Min

Max

110

110

0

50

0

30

0

800

AT49BV/LV008-12

Min

Max

120

120

0

50

0

30

0

800

AT49BV008-15

Min

Max

150

150

0

70

0

40

0

800

Units

ns

ns

ns

ns

ns

ns

ADDRESS VALID

CE

OE

RESET

OUTPUT

tCE

tOE

tACC

tRO

HIGH Z

tDF

tOH

OUTPUT

VALID

Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.

2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change

without impact on tACC.

3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).

4. This parameter is characterized and is not 100% tested.

Input Test Waveforms and

Measurement Level

AC

DRIVING

LEVELS

2.4V

0.4V

1.5V

AC

MEASUREMENT

LEVEL

tR, tF < 5 ns

Output Test Load

3.0V

1.8K

1.3K

OUTPUT

PIN

100 pF

Pin Capacitance

(f = 1 MHz, T = 25 C)

Typ

Max

CIN

COUT

Note:

4

6

8

12

1. This parameter is characterized and is not 100% tested.

6

AT49BV/LV008

Units

pF

pF

Conditions

VIN = 0V

VOUT = 0V

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