PS2511-1 查看數據表（PDF） - NEC => Renesas Technology

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PS2511-1

HIGH ISOLATION VOLTAGE STANDARD MULTI PHOTOCOUPLER SERIES SINGLE TRANSISTOR TYPE

NEC => Renesas Technology 

PS2511-1,-2,-4, PS2511L-1,-2,-4

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter

Symbol

Conditions

Diode

Forward Voltage

VF IF = 10 mA

Reverse Current

IR

VR = 5 V

Terminal Capacitance

Transistor Collector to Emitter

Dark Current

Ct V = 0 V, f = 1.0 MHz

ICEO VCE = 40 V, IF = 0 mA

Coupled

Current Transfer Ratio

(IC/IF)*1

CTR IF = 5 mA, VCE = 5 V

Collector Saturation Voltage VCE(sat) IF = 10 mA, IC = 2 mA

Isolation Resistance

RI-O

VI-O = 1.0 kVDC

Isolation Capacitance

Rise Time*2

Fall Time*2

CI-O V = 0 V, f = 1.0 MHz

tr

VCC = 10 V, IC = 2 mA, RL = 100 Ω

tf

MIN. TYP. MAX. Unit

1.2

1.4

V

5

µA

50

pF

100

nA

80

200

400

%

0.3

V

1011

Ω

0.5

pF

3

µs

5

*1 CTR rank (PS2511-1,PS2511L-1 only)

D : 100 to 300 %

*2 Test Circuit for Switching Time

IF

Pulse Input

PW = 100 µs

Duty Cycle = 1/10

In monitor

50 Ω

VCC

VOUT

RL = 100 Ω

5

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