PS2532L2-1-V(1990) 查看數據表（PDF） - NEC => Renesas Technology

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PS2532L2-1-V
(Rev.:1990)

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

NEC => Renesas Technology 

PS2532-1,-2,-4,PS2532L-1,-2,-4

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

Transistor Collector to Emitter

Dark Current

Coupled

Current Transfer Ratio

(IC/IF)

Collector Saturation

Voltage

Isolation Resistance

Isolation Capacitance

Rise Time *1

Fall Time *1

Symbol

Conditions

VF

IF = 10 mA

IR

VR = 5 V

Ct V = 0 V, f = 1.0 MHz

ICEO VCE = 300 V, IF = 0 mA

CTR IF = 1 mA, VCE = 2 V

VCE (sat) IF = 1 mA, IC = 2 mA

RI-O

VI-O = 1.0 kVDC

CI-O V = 0 V, f = 1.0 MHz

tr

VCC = 5 V, IC = 10 mA, RL = 100 Ω

tf

MIN. TYP. MAX. Unit

1.15

1.40

V

5

µA

30

pF

400

nA

1 500 4 000 6 500

%

1.0

V

1011

Ω

0.6

pF

100

µs

100

*1 Test circuit for switching time

Pulse input

(PW = 1 ms,

Duty cycle = 1/10)

IF

50 Ω

VCC

VOUT

RL = 100 Ω

7

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