PSB36 查看數據表（PDF） - Powersem GmbH
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PSB36 Datasheet PDF : 2 Pages
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200
[A] 1:TVJ= 150°C
2:TVJ= 25°C
150
I-I-FF
-(-O-V-)
SM
1.6
1.4
I FSM (A)
TVJ=45°C TVJ=150°C
480
500
4
10
A2s
100
50
IF
1
2
0
0.5 1 1.5 2 2.5
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
70
[W] PSB 36
60
50
40
30
20
10
PVTOT
0
IFAVM
0.36
0.71
1.43
2.86
DC
sin.180°
rec.120°
rec.60°
rec.30°
7.14
20
0
50
[A] Tamb
50
TC
55
= RTHCA [K/W]
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
°C
150
100
150
[K]
3
10
TV J=45 °C
TVJ =150 °C
2
10
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
50
[A]
40
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
10
IdAV
0
50 100 150 200
TC(°C)
Fig. 4 Power dissipation versus direct output current and ambient temperature
8
K/W
6
Z thJK
Z thJC
Fig.5 Maximum forward current
at case temperature
4
2
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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