DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PTB20009 查看數據表(PDF) - Ericsson

零件编号
产品描述 (功能)
生产厂家
PTB20009 Datasheet PDF : 2 Pages
1 2
PTB 20009
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 50 mA
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz,
—all phase angles at frequency of test)
Symbol Min
Gpe
9
ηC
50
Ψ
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
80
12
68
Efficiency (%)
11
56
10
VCC = 24 V
9 ICQ = 50 mA
Pout = 2.5 W
Gain (dB)
8
920
930
940
950
960
Frequency (MHz)
44
32
20
970
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
10
12
dB
%
30:1
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]