PEMD13 查看數據表（PDF） - NXP Semiconductors.
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PEMD13 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product data sheet
PEMD13; PUMD13
ORDERING INFORMATION
TYPE NUMBER
PEMD13
PUMD13
NAME
−
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
Per device
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
note 1
notes 1 and 2
Ptot
total power dissipation
SOT363
SOT666
Tamb ≤ 25 °C
note 1
notes 1 and 2
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
MAX.
50
50
10
+30
−5
+5
−30
100
100
200
200
+150
150
+150
300
300
UNIT
V
V
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
2003 Oct 08
3
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