Q62702-B478 查看數據表（PDF） - Siemens AG

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Q62702-B478

Silicon Variable Capacitance Diode

Siemens AG 

BB 811

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Reverse current

IR

VR = 30 V

VR = 30 V, TA = 85 ˚C

Diode capacitance, f = 1 MHz

CT

VR = 1 V

VR = 28 V

Capacitance ratio

CT1

f = 1 MHz, VR = 1 V/28 V

CT28

Series resistance

rS

f = 100 MHz, CT = 9 pF

Case capacitance

CC

f = 1 MHz

Capacitance matching

∆CT

f = 1 MHz, VR = 0.5 … 28 V

CT

Series inductance

LS

Diode capacitance CT = f (VR)

f = 1 MHz

min.

–

–

7.8

0.85

7.8

–

–

–

–

Values

Unit

typ.

max.

nA

–

20

–

500

pF

8.8

9.8

1.02

1.2

8.6

9.5

–

1

–

Ω

0.1

–

pF

–

3

%

2.8

–

nH

Semiconductor Group

2

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