Q62702-C2373 查看數據表（PDF） - Siemens AG
零件编号
产品描述 (功能)
生产厂家
Q62702-C2373 Datasheet PDF : 6 Pages
| |||
BC 857S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
V(BR)CEO 45
V(BR)CBO 50
V(BR)CES 50
V(BR)EBO 5
ICBO
-
ICBO
-
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
hFE
-
200
VCEsat
-
-
VBEsat
-
-
VBE(ON)
600
-
Values
typ.
-
-
-
-
-
-
250
290
75
250
700
850
650
-
max.
-
-
-
-
15
5
-
630
300
650
-
-
750
820
Unit
V
nA
µA
-
mV
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
May-12-1998
Share Link: 