BCR108S 查看數據表（PDF） - Siemens AG
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BCR108S Datasheet PDF : 4 Pages
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NPN Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated Transistors
in on package
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
BCR 108S
Type
Marking Ordering Code Pin Configuration
Package
BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
5
10
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 275
K/W
≤ 140
Semiconductor Group
1
Nov-26-1996
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