R2A20112SP 查看數據表（PDF） - Renesas Electronics
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R2A20112SP Datasheet PDF : 8 Pages
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R2A20112SP/DD
Electrical Characteristics (cont.)
(Ta = 25°C, Vcc = 12 V, RT = 22 kΩ, OCP = GND, CRAMP = 680 pF, RZCD-GND = 51 kΩ, FB = COMP)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate
drive
Master gate drive rise time tr-gdm
—
30
100
ns CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Slave gate drive rise time tr-gds
—
30
100
ns CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Master gate drive fall time tf-gdm
—
30
100
ns CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Slave gate drive fall time tf-gds
—
30
100
ns CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Master gate drive low
voltage
Vol1-gdm
Vol2-gdm
—
0.05
0.2
V Isink = 2 mA
—
0.03
0.7
Isink = 1 mA, VCC = 5 V
Master gate drive high
voltage
Voh-gdm
11.5
11.9
—
V Isource = –2 mA
Slave gate drive low
voltage
Slave gate drive high
voltage
Vol1-gds
Vol2-gds
Voh-gds
—
0.05
0.2
—
0.03
0.7
11.5
11.9
—
V Isink = 2 mA
Isink = 1 mA, VCC = 5 V
V
Isource = –2 mA *1
Over
current
protection
OCP threshold voltage
Vocp
0.27
0.3
0.33
V
Over
voltage
protection
Dynamic OVP threshold
voltage
Static OVP threshold
voltage
Vdovp
Vsovp
VFB×
1.035
VFB×
1.075
VFB×
1.050
VFB×
1.090
VFB×
1.065
VFB×
1.105
V
V COMP = Open
Static OVP hysteresis
Hys-sovp
50
100
150
mV COMP = Open
FB open detect threshold
voltage
Vfbopen
0.45
0.50
0.55
V COMP = Open
FB open detect hysteresis Hysfbopen
0.16
0.20
0.24
V COMP = Open
Note: 1. Design spec.
R19DS0079EJ0400 Rev.4.00
Dec 13, 2014
Page 6 of 7
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