RC5052M 查看數據表（PDF） - Fairchild Semiconductor

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RC5052M

High Performance Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors

Fairchild Semiconductor 

PRODUCT SPECIFICATION

RC5052

Table 2. RC5052 Application Bill of Materials for Coppermine/Camino Processors, Including

Crowbar (Typical Design)

Reference Manufacturer Part # Quantity

Description

Requirements/Comments

C1-2, C5

AVX

TAJB475M010R5

3

1µF, 16V Capacitor

C3-4,6

Panasonic

ECU-V1H104ZFX

3

100nF, 50V Capacitor

CIN

Sanyo

10MV1200GX

3

1200µF, 10V Electrolytic IRMS = 2A

COUT

Sanyo

6MV1500GX

8

1500µF, 6.3V

Electrolytic

ESR ≤ 44mΩ

D1

Fairchild

MBRS320

1

8A Schottky Diode

D2

Fairchild

MMSZ5233B

1

6.2V Zener

L1

Any

Optional 2.5µH, 10A Inductor

DCR ~ 6mΩ

See Note 1.

L2

Any

1

1.3µH, 20A Inductor

DCR ~ 2mΩ

Q1-2

Fairchild

FDP6030L or

FDB6030L

2

N-Channel MOSFET

RDS(ON) = 20mΩ @ VGS = 4.5V

(TO-220 or TO-263)

See Note 2.

Q3

Motorola

2N6394

Optional SCR

R1

Any

1

33Ω

R2-3

Any

2

4.7Ω

R4

Any

1

10KΩ

R5

Any

1

6.24KΩ

R6, R10

Any

2

10Ω

R7

Any

Optional

Sets frequency.

R8

Any

Optional

Sets deadtime.

R9

Any

1

3.0mΩ

PCB Trace Resistor

R11

Any

Optional 200Ω

Must be used when Q3 present.

F1

Littelfuse

R251 005

Optional 5A Fast Fuse

U1

Fairchild

RC5052M

1

DC/DC Controller

Notes:

1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply

with Intel dI/dt requirements. L1 may be omitted if desired.

2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For designs using

the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer

to Applications Bulletin AB-8.

REV. 1.3.2 8/27/01

9

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