RF101L4S(2011) 查看數據表（PDF） - ROHM Semiconductor

零件编号

产品描述 (功能)

生产厂家

RF101L4S
(Rev.:2011)

Fast Recovery Diode

ROHM Semiconductor 

Fast Recovery Diode

RF101L4S

Applications

General rectification

Features

1)Small power mold type. (PMDS)

2)Ultra low VF

3)Ultra high switching speed

4)Low switching loss

Construction

Silicon epitaxial planar

Dimensions (Unit : mm)

2.6±0.2

Land size figure (Unit : mm)

2.0

86 86

①②

1.5±0.2

0.1±0.02

　　　 0.1

2.0±0.2

PMDS

Structure

ROHM : PMDS

JEDEC : SOD-106

① ② Manufacture date

Taping dimensions (Unit : mm)

2.0±0.05

4.0 ±0.1

φ1 .55±0 .05

0.3

2.9±0.1

4.0±0.1

φ1.55

2.8 MAX

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive)

VRM

400

V

Reverse voltage (DC)

VR

400

V

Average rectified forward current (*1)

Io

1

A

Forward current surge peak (60Hz・1cyc) IFSM

25

A

Junction temperature

Tj

150

°C

Storage temperature

Tstg

55 to 150

°C

(*1)Mounted on epoxy board. 180°Half sine wave

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF

-

- 1.25

Reverse current

IR

-

-

10

Reverse recovery time

trr

-

-

25

Unit

Conditions

V

IF=1.0A

μA

VR=400V

ns

IF=0.5A,IR=1A,Irr=0.25*IR

www.rohm.com

©2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.06 - Rev.B

Share Link: