RF2047 查看數據表（PDF） - RF Micro Devices

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RF2047

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2047

Preliminary

Absolute Maximum Ratings

Parameter

Rating

Unit

Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature

75

+15

-40 to +85

-60 to +150

mA

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

Overall

4

Frequency Range

3dB Bandwidth

DC to 6000

>6

Gain

16.3

16.0

14.0

15.3

15.0

14.8

14.0

Gain Flatness

±0.5

Noise Figure

4.2

Input VSWR

1.8:1

1.6:1

Output VSWR

1.7:1

2.2:1

Output IP3

Output P1dB

+26

+11.9

Reverse Isolation

19.4

Thermal

ThetaJC

196

Maximum junction temperature

112

Mean Time Between Failures

1.5 x 104

Mean Time Between Failures

9.3 x 106

Mean Time Between Failures

2.9 x 1011

Power Supply

MHz

GHz

dB

dB

dB

dB

dB

dB

dB

dB

dBm

dBm

dB

°C/W

°C

years

years

years

T=25 °C, VD=3.6V, ICC=40mA

Freq = 100 MHz

Freq = 1000 MHz

Freq =2000 MHz

Freq = 3000 MHz

Freq = 4000 MHz

Freq = 6000 MHz

100MHz to 2000MHz

Freq = 2000 MHz

In a 50Ω system, DC to 3000MHz

In a 50Ω system, 3000MHz to 6000MHz

In a 50Ω system, DC to 3000MHz

In a 50Ω system, 3000MHz to 6000MHz

Freq=2000MHz±50kHz, PTONE=-10dBm

Freq =2000 MHz

Freq =2000 MHz

ICC=40mA, PDISS=135mW

TAMB = +85 °C

TAMB = +25 °C

TAMB = -40 °C

With 22Ω bias resistor

Device Operating Voltage

Operating Current

3.0

3.6

4.0

V

At pin 3 with ICC=40mA

40

mA

4-26

Rev A4 010110

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