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HD45H11 查看數據表(PDF) - Hi-Sincerity Microelectronics

零件编号
产品描述 (功能)
生产厂家
HD45H11
Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
HD45H11 Datasheet PDF : 2 Pages
1 2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6763-B
Issued Date : 1994.11.09
Revised Date : 1999.08.01
Page No. : 1/2
HD45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HD45H11 is designed for various specific and general purpose
applications, such as:output and driver stages of amplifiers
operating at frequencies from DC to greater than 1MHz; series,
shunt and switching regulators; low and high frequency
inverters/converters; and many others.
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 50 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current ................................................................................................................... -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-80
-
BVCES
-80
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
100
-
*hFE2
60
-
*hFE3
40
-
Cob
-
230
fT
-
40
Max.
-
-
-
-
-10
-100
-1
-1.5
-
-
-
-
-
Unit
Test Conditions
V
V
V
V
uA
uA
V
V
pF
MHz
IC=-100mA
IC=-100mA
IC=-1mA
IE=-1mA
VCB=-80V
VEB=-5V
IC=-8A, IB=-0.8A
IC=-8A, IB=-0.8A
IC=-250mA, VCE=-1V
IC=-2A, VCE=-1V
IC=-4A, VCE=-1V
VCB=-10V
VCE=-1V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
HSMC Product Specification

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