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RFUS20TM6S 查看數據表(PDF) - ROHM Semiconductor
零件编号
产品描述 (功能)
生产厂家
RFUS20TM6S
Super Fast Recovery Diode
ROHM Semiconductor
RFUS20TM6S Datasheet PDF : 4 Pages
1
2
3
4
RFUS20TM6S
Electrical characteristics curves
100
Tj=125
C
Tj=150
C
10
Tj=25
C
Tj=75
C
1
0.1
0
1000
2000
3000
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
100000
10000
1000
Tj=150
C
Tj=125
C
100
Tj=75
C
4000
10
Tj=25
C
1
0 50 100 150 200 250 300 350
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
2500
2400
2300
2200
2100
2000
1900
AVE : 2113mV
T
j
=25
C
I
F
=20A
n=20pcs
1000
100
10
1
V
F
DISPERSION MAP
T
j
=25
C
V
R
=600V
n=20pcs
AVE : 61.8nA
I
R
DISPERSION MAP
Data Sheet
1000
100
f=1MHz
Tj=25
C
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
450
445
Ta=25
C
440
f=1MHz
435
V
R
=0V
n=10pcs
430
AVE : 415.9pF
425
420
415
410
405
400
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
40
I
FSM
1cyc
35
8.3ms
30
25
20
AVE : 156A
15
10
I
FSM
DISRESION MAP
15
I
FSM
time
12
9
6
3
0
10
100
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
T
j
=25
C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
1000
100
AVE:26.1ns
trr DISPERSION MAP
10
I
FSM
8.3ms 8.3ms
1cyc.
1
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
10
Rth(j-c)
AVE : 1.20kV
AVE : 11.0kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
1
0.1
0.001 0.01 0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
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2/3
2011.06 - Rev.A
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