RHRP860 查看數據表（PDF） - Fairchild Semiconductor
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RHRP860 Datasheet PDF : 5 Pages
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Data Sheet
RHRP840, RHRP860
January 2002
8A, 400V - 600V Hyperfast Diodes
The RHRP840 and RHRP860 are hyperfast diodes with soft
recovery characteristics (trr < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many
power switching circuits reducing power loss in the switching
transistors.
Formerly developmental type TA49059.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP840
TO-220AC
RHRP840
RHRP860
TO-220AC
RHRP860
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
CATHODE
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = 150oC)
Forward
Current
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I F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RHRP840
400
400
400
8
16
100
75
20
-65 to 175
RHRP860
600
600
600
8
UNITS
V
V
V
A
16
A
100
A
75
W
20
mJ
-65 to 175
oC
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
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