RMPA1967 查看數據表（PDF） - Fairchild Semiconductor

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RMPA1967

US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge™ Power Amplifier Module

Fairchild Semiconductor 

May 2005

RMPA1967

US-PCS CDMA, CDMA2000-1X and WDCMA

Power Edge™ Power Amplifier Module

Features

■ Single positive-supply operation and low power and

shutdown modes

■ 40% CDMA/WCDMA efficiency at +28 dBm average output

power

■ Compact lead-free compliant, LCC package-

(3.0 x 3.0 x 1.0 mm nominal)

■ Internally matched to 50 Ohms and DC blocked RF

input/output

■ Meets CDMA2000-1XRTT/WCDMA performance require-

ments

■ Meets HSDPA performance requirements

■ Alternative pin-out to Fairchild RMPA1965

Device

General Description

The RMPA1967 power amplifier module (PAM) is designed for

CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-

nications system (PCS) applications. The 2-stage PAM is inter-

nally matched to 50 Ohms to minimize the use of external

components and features a low-power mode to reduce standby

current and DC power consumption during peak phone usage.

High power-added efficiency and excellent linearity are

achieved using Fairchild RF’s InGaP Heterojunction Bipolar

Transistor (HBT) process.

Functional Block Diagram

(Top View)

Vref 1

Vmode 2

RF IN 3

Vcc1 4

MMIC

DC Bias Control

Input

Match

8 GND

7 GND

Output

Match

6 RF OUT

5 Vcc2

©2005 Fairchild Semiconductor Corporation

RMPA1967 Rev. F

(paddle ground on

package bottom)

1

www.fairchildsemi.com

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