RN4988(2001) 查看數據表（PDF） - Toshiba
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RN4988 Datasheet PDF : 6 Pages
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RN4988
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4988
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
Includeing two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 22kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
7
100
Rating
−50
−50
−7
−100
Unit
JEDEC
EIAJ
V
TOSHIBA
V
Weight: 6.8mg
V
mA
―
―
2-2J1A
Unit
V
V
V
mA
1
2001-06-07
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