RPM870-H14 查看數據表（PDF） - ROHM Semiconductor
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RPM870-H14
ROHM Semiconductor
RPM870-H14 Datasheet PDF : 7 Pages
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Photo Link Module
RPM870-H14
zElectrical characteristics (Unless otherwise noted, VCC=3V, VLEDVCC=3V, Ta=25°C)
Parameter
Symbol Min. Typ.
Consumption Current 1
ICC1
−
90
Consumption Current 2
ICC2
−
0.01
Transmission rate
2.4
−
PWDOWN INPUT High Voltage VPDH VCC−0.5 −
PWDOWN INPUT Low Voltage VPDL
−
−
PWDOWN INPUT High Current IPDH
−1.0
0
PWDOWN INPUT Low Current IPDL
−1.0
0
Max.
120
0.2
115.2
−
0.55
1.0
1.0
Unit
µA
µA
kbps
V
V
µA
µA
Conditions
Waiting mode, no input light.
PWDOWN = VCC [V] , no input light.
PWDOWN = VCC [V]
PWDOWN = 0 [V]
<Transmitter>
TXD INPUT High Voltage
TXD INPUT Low Voltage
TXD INPUT High Current
TXD INPUT Low Current
LED ANODE Current
VTXH VCC−0.55 −
VTXL
−
−
ITXH
7.5
15
ITXL
−1.0
0
ILEDA
−
50
−
0.55
30
1.0
−
V
V
µA TXD = VCC [V]
µA TXD = 0 [V]
mA
<Receiver>
RXD OUTPUT High Voltage
RXD OUTPUT Low Voltage
RXD OUTPUT Rise Time
RXD OUTPUT Fall Time
RXD OUTPUT Pulse Width
Receiver Latency Time
VRXH VCC−0.5 −
VRXL
−
−
tRR
−
70
tFR
−
30
twRXD
1.5
2.3
tRT
−
100
−
V IRXH = −50µA
0.4
V IRXL = 200µA
−
nsec CL = 15pF
−
nsec CL = 15pF
3.6
µsec CL = 15pF, 2.4 to 115.2Kbps
200 µsec
zOptical characteristics (Unless otherwise noted, VCC=3V, VLEDVCC=3V, Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Peak wave length
λP
850
870
900
nm
Intensity
IE1
4.0
10
26 mW / sr −15˚ ≤ θL ≤ 15˚
Half-Angle
θL / 2
±15
−
−
deg
Rise time / Fall time
Tr / Tf
−
−
100
nsec 10% to 90%
Optical over shoot
−
−
25
%
Edge jitter
Tj
−40
−
40
nsec
Irradiance in angular
INPUT Half-Angular
Ee
0.0068
−
θD / 2
±15
−
500 mW / cm2 −15˚ ≤ θL ≤ 15˚
−
deg
Maximum Emitting Time TLEDmax 16
48
96
µsec TXD=VCC
1.This product is not designed for protection against radioactive rays.
2.This product dose not include laser transmitter.
3.This product includes one pin photo diode.
4.This product dose not include optical load.
4/6
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