RQA0009TXDQS 查看數據表（PDF） - Renesas Electronics
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RQA0009TXDQS Datasheet PDF : 13 Pages
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RQA0009TXDQS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK R )
3
321
1
4
REJ03G1520-0100
Rev.1.00
Jul 04, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “TX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
3.2
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1520-0100 Rev.1.00 Jul 04, 2007
Page 1 of 12
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