RQA0009TXDQS 查看數據表（PDF） - Renesas Electronics
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RQA0009TXDQS Datasheet PDF : 13 Pages
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RQA0009TXDQS
Electrical Characteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
PAE
Pout
PAE
Min.
—
—
0.15
2.2
—
—
—
36.8
4.8
60
—
—
—
Typ
—
—
0.5
3.2
76
40
3.5
37.8
6.0
65
35.2
3.3
60
Max.
15
±2
0.8
4.4
—
—
—
—
—
—
—
—
—
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.6 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 180 mA
f = 520 MHz,
Pin = +25 dBm (316 mW)
VDS = 4.8 V, IDQ = 300 mA
f = 465 MHz,
Pin = +17 dBm (50 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
20
15
10
5
Typical Output Characteristics
Pulse Test
4
2.0 V
1.75 V
3
1.5 V
2
1.25 V
1
VGS = 1.0 V
00
50
100
150
200
Case Temperature TC (°C)
00
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characterisitics
4
VDS = 6 V
Pulse Test
3
|yfs|
2
ID
Forward Transfer Admittance
vs. Drain Current
10.0
VDS = 6 V
Pulse Test
1.0
1
0
0
0.5
1.0
1.5
2.0
Gate to Source Voltage VGS (V)
0.1
0.1
1.0
10.0
Drain Current ID (A)
REJ03G1520-0100 Rev.1.00 Jul 04, 2007
Page 2 of 12
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