RQA0001DNSTR-E 查看數據表（PDF） - Renesas Electronics
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RQA0001DNSTR-E Datasheet PDF : 13 Pages
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RQA0001DNS
Electrical Characteristics
Item
Zero gate voltage drain current
Gate to source leakage current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Power Added Efficiency
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
PAE
Min.
—
—
0.15
0.6
—
—
—
32
1.58
55
Typ
—
—
0.45
1.1
22
12
2.6
33
2
68
Max.
10
±2
0.75
1.6
—
—
—
—
—
—
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 600 mA
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 200 mA
f = 520 MHz,
Pin = +20 dBm (100 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
8
6
4
2
0
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
2.0 V
1.0
Pulse Test
1.75 V
0.8
0.6
1.5 V
0.4
1.25 V
0.2
VGS = 1.0 V
0.0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.2
VDS = 6 V
1.0 Pulse Test
0.8
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ID
0.6
0.4
0.2
0.0
0
0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
10.0
VDS = 6 V
Pulse Test
1.0
0.1
0.1
1.0
10.0
Drain Current ID (A)
Rev.3.00 Oct 11, 2006 page 2 of 12
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