RQA0008RXDQS 查看數據表（PDF） - Renesas Electronics
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RQA0008RXDQS Datasheet PDF : 15 Pages
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RQA0008RXDQS
Electrical Characteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Power Added Efficiency
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
PAE
Min.
—
—
0.15
1.7
—
—
—
35
3.16
50
Typ
—
—
0.4
2.4
44
25
6.0
36
3.98
65
Max.
10
±2
0.8
3.1
—
—
—
—
—
—
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.2 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 400 mA
f = 520 MHz,
Pin = +20 dBm (100mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
12
10
8
6
4
2
0
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
2.0 V
2.5
Pulse Test
1.75 V
2.0
1.5 V
1.5
1.25 V
1.0
0.5
VGS = 1.0 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characterisitics
3.0
VDS = 6 V
2.5 Pulse Test
2.0
|yfs|
1.5
1.0
ID
0.5
0
0 0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 6 V
Pulse Test
1
0.1
0.1
1
10
Drain Current ID (A)
Rev.1.00 Oct 16, 2006 page 2 of 12
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