RSB6.8ZS(2011) 查看數據表（PDF） - ROHM Semiconductor
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RSB6.8ZS Datasheet PDF : 5 Pages
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Data Sheet
Bi direction ESD Protection Diode
RSB6.8ZS
Applications
ESD Protection
Dimensions (Unit : mm)
Features
1)Ultra small mold type.(GMD2)
2)Bi-directionality.
3)High reliability.
4)By chip-mounter,automatic
mounting is possible.
8
0.3±0.06
0～0.03
0.27±0.03
0.27±0.03
Constructions
Silicon epitaxial planer
Land size figure (Unit : mm)
0.31
Structure
ROHM : GMD2
JEDEC : -
JEITA : -
dot(year week factory)
GMD2
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
100
mW
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
Operation temperature range
Topor
−55 to +150
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Zener voltage
Vz
5.78
-
7.82
Reverse current
IR
-
-
0.5
Unit
Conditions
V
IZ=1mA
μA
VR=3.5V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
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