RT9709BGQWB 查看數據表（PDF） - Richtek Technology
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RT9709BGQWB Datasheet PDF : 12 Pages
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RT9709
Parameter
Symbol
Test Conditions
Min Typ Max Units
Battery Over Voltage Protection
Threshold
VBOVP Hysteresis
4.3 4.35 4.4
V
--
30
-- mV
Battery OVP Blanking time
VB Pin Leakage Current
OTP Threshold
BTOVP
TSD
VVB = 4.4V
Rising
Falling
-- 180 --
us
--
-- 100 nA
-- 140 --
°C
--
90
--
°C
Logic
Logic-High Voltage
EN/ Threshold
VIH
Logic-Low Voltage VIL
EN/ Internal Pull Down Resistor
1.5
--
--
V
--
--
0.4
V
100 200 400 kΩ
WRN/ Output Logic Low
Sink 5mA
-- 0.35 0.8
V
WRN Output Logic High Leakage
Current
--
--
1
uA
Power MOSFET
On Resistance (P-MOSFET)
RON1 IOUT = 500mA, 4.3V < VIN < 6.5V --
200 400 mΩ
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard. The case position of θJC is on the exposed pad of the packages.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
www.richtek.com
4
DS9709-02 April 2011
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