RT9594A 查看數據表（PDF） - Richtek Technology
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RT9594A Datasheet PDF : 10 Pages
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RT9594A/B
Parameter
Symbol
Built-in N-Channel Enhancement MOSFET
Test Conditions
Drai n-Sou rc e
On-Resistance
RT9 594A
RT9 594B
Max Off Time During Pre-Charge
RDS(ON)
ID = 10mA
Min Off Time
IGBT Driver
IGBT Driver Supply Voltage
DRVIN Trip Point
DRVOUT On Resistance to VVDRV
DRVOUT On Resistance to GND
Propagation Delay (Rising)
VVDRV
VVDRV = 3.3V
VVDRV = 3.3V
Propagation Delay (Falling)
Voltage Detector
Voltage Detector Trip (Falling)
Voltage Detector Hysteresis
VDOUT on Resistance to GND
VFBVD
FBVD Falling
VFBVD_HYS
Min Typ Max Units
--
300 400
mΩ
--
250 350
--
9
--
us
--
400
--
ns
2
--
5.5
V
0.8 1.5 2.4
V
--
6
--
Ω
--
6
--
Ω
--
20
--
ns
--
200
--
ns
0.95 0.99 1.03
V
--
65
--
mV
--
12
--
Ω
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board (single layer,
1S) of JEDEC 51-3 thermal measurement standard. The case point of θJC is on the expose pad for the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
DS9594A/B-02 April 2011
www.richtek.com
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