RTF015N03TL 查看數據表（PDF） - ROHM Semiconductor
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RTF015N03TL Datasheet PDF : 14 Pages
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RTF015N03
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Ciss
Coss
Crss
td(on)*4
VGS = 0V
VDS = 10V
f = 1MHz
VDD ⋍ 15V,VGS = 4.5V
-
-
-
-
80
14
12
7
for-
-
pF
-
-
Rise time
d Turn - off delay time
Fall time
tr*4
td(off)*4
tf*4
ID = 0.75A
RL ⋍ 20Ω
RG = 10Ω
-
9
-
-
15
-
-
6
-
nde s lGate charge characteristics (Ta = 25°C)
me ign Parameter
Symbol
Conditions
s Total gate charge
m Gate - Source charge
o e Gate - Drain charge
Qg*4
Qgs*4
Qgd*4
VDD ⋍ 15V,
ID = 1.5A,
VGS = 4.5V
Values
Min. Typ. Max.
-
1.6 2.2
-
0.5
-
-
0.3
-
ec w D lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
R e Parameter
Symbol
Conditions
Values
Min. Typ. Max.
t N Continuous forward current
No Pulse forward current
IS
Ta = 25℃
ISP*1
-
-
0.6
-
-
6.0
ns
Unit
nC
Unit
A
A
Forward voltage
VSD*4 VGS = 0V, IS = 0.6A
-
-
1.2
V
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20151109 - Rev.001
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