S29GL064M11FDIR62 查看數據表（PDF） - Spansion Inc.
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S29GL064M11FDIR62 Datasheet PDF : 116 Pages
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S29GL-M MirrorBitTM Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit Process Technology
Data Sheet
This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N,
and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M respectively. These are the factory-recommended migration
paths. Please refer to the S29GL-A and S29GL-N Datasheets for specifications and ordering information. Availability of this document is retained
for reference and historical purposes only.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256 Mb: 512 32-Kword (64 Kbyte) sectors
— 128 Mb: 256 32-Kword (64 Kbyte) sectors
— 64 Mb (uniform sector models): 128 32-Kword
(64-Kbyte) sectors or 128 32 Kword sectors
— 64 Mb (boot sector models): 127 32-Kword
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
— 32 Mb (uniform sector models): 64 32-Kword
(64-Kbyte) sectors of 64 32-Kword sectors
— 32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
sectors + 8 4-Kword (8-Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
— 90 ns access time (128 Mb, 64 Mb, 32 Mb),
100 ns access time (256 Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
— 30 ns page read times (256 Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V,
5 MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Publication Number S29GL-M_00 Revision B Amendment 6 Issue Date October 10, 2006
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