S-8233A 查看數據表（PDF） - Seiko Instruments Inc

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S-8233A

BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

Seiko Instruments Inc 

Rev.3.2_10

BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

S-8233A Series

Electrical Characteristics

Table 6 (1 / 2)

(Ta = 25 °C unless otherwise specified)

Measure- Measure-

Item

Symbol

Condition

Min. Typ. Max. Unit ment ment

condition circuit

Detection voltage

Over charge detection voltage1

VCU1

4.10 to 4.35 Adjustment VCU1−0.05 VCU1 VCU1+0.05 V

1

1

Over charge release voltage1

VCD1

3.85 to 4.35 Adjustment VCD1−0.10 VCD1 VCD1+0.10 V

1

1

Over discharge detection voltage1

VDD1

2.00 to 2.70 Adjustment VDD1−0.08 VDD1 VDD1+0.08 V

1

1

Over discharge release voltage1

VDU1

2.00 to 3.70 Adjustment VDU1−0.10 VDU1 VDU1+0.10 V

1

1

Over charge detection voltage 2

VCU2

4.10 to 4.35 Adjustment VCU2−0.05 VCU2 VCU2+0.05 V

2

1

Over charge release voltage 2

VCD2

3.85 to 4.35 Adjustment VCD2−0.10 VCD2 VCD2+0.10 V

2

1

Over discharge detection voltage 2

VDD2

2.00 to 2.70 Adjustment VDD2−0.08 VDD2 VDD2+0.08 V

2

1

Over discharge release voltage 2

VDU2

2.00 to 3.70 Adjustment VDU2−0.10 VDU2 VDU2+0.10 V

2

1

Over charge detection voltage3

VCU3

4.10 to 4.35 Adjustment VCU3−0.05 VCU3 VCU3+0.05 V

3

1

Over charge release voltage3

VCD3

3.85 to 4.35 Adjustment VCD3−0.10 VCD3 VCD3+0.10 V

3

1

Over discharge detection voltage3

VDD3

2.00 to 2.70 Adjustment VDD3−0.08 VDD3 VDD3+0.08 V

3

1

Over discharge release voltage3

VDU3

2.00 to 3.70 Adjustment VDU3−0.10 VDU3 VDU3+0.10 V

3

1

Over current detection voltage1*1

VIOV1

0.15 to 0.50V Adjustment VIOV1 x 0.9 VIOV1 VIOV1 x 1.1 V

4

2

Over current detection voltage 2

VIOV2

VCC Reference

0.54 0.6 0.66

V

4

2

Over current detection voltage3

Voltage temperature factor 1*2

Voltage temperature factor 2*3

VIOV3

TCOE1

TCOE2

VSS Reference

Ta=-20 to 70°C

Ta=-20 to 70°C

1.0

2.0 3.0

V

4

2

−1.0

0

1.0 mV/°C

−

−

−0.5

0

0.5 mV/°C

−

−

Delay time

Over charge detection delay time1

tCU1

CCCT=0.47 µF

0.5

1.0 1.5

s

9

6

Over charge detection delay time 2

tCU2

CCCT=0.47 µF

0.5

1.0 1.5

s

10

6

Over charge detection delay time3

tCU3

CCCT=0.47 µF

0.5

1.0 1.5

s

11

6

Over discharge detection delay time1 tDD1

CCDT=0.1 µF

20

40

60

ms

9

6

Over discharge detection delay time 2 tDD2

CCDT=0.1 µF

20

40

60

ms

10

6

Over discharge detection delay time3 tDD3

CCDT=0.1 µF

20

40

60

ms

11

6

Over current detection delay time1

tIOV1

Over current detection delay time 2

tIOV2

CCOVT=0.1 µF

−

10

20

30

ms

12

7

2

4

8

ms

12

7

Over current detection delay time3

tIOV3 FET gate capacitor =2000 pF 100

300 550

µs

12

7

Operating voltage

Operating voltage between VCC and

VSS*4

VDSOP

−

2.0

−

24

V

−

−

Current consumption

Current consumption (during normal

operation)

IOPE

V1=V2=V3=3.5 V

−

20

50

µA

5

3

Current consumption for cell 2

ICELL2

V1=V2=V3=3.5 V

−300

0

300

nA

5

3

Current consumption for cell 3

ICELL3

V1=V2=V3=3.5 V

−300

0

300

nA

5

3

Current consumption at power down IPDN

V1=V2=V3=1.5 V

−

−

0.1

µA

5

3

Internal resistance

Resistance between

VCC and VMP

RVCM

V1=V2=V3=3.5 V

0.40 0.90 1.40 MΩ

6

3

V1=V2=V3=3.5 V *5

0.20 0.50 0.80 MΩ

6

3

Resistance between

VSS and VMP

RVSM

V1=V2=V3=1.5 V

0.40 0.90 1.40 MΩ

6

3

V1=V2=V3=1.5 V *5

0.20 0.50 0.80 MΩ

6

3

Input voltage

CTL"H" Input voltage

CTL"L" Input voltage

VCTL(H)

−

VCCx0.8 −

−

V

−

−

VCTL(L)

−

−

− VCCx0.2 V

−

−

Seiko Instruments Inc.

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