S9013M 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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S9013M

NPN Epitaxial Silicon Transistor

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

WBFBP-03B Plastic-Encapsulate Transistors

S9013M TRANSISTOR

DESCRIPTION

NPN Epitaxial Silicon Transistor

FEATURES

High Collector Current. (IC=500mA)

Complementary to S9012M

Excellent hFE linearity.

APPLICATION

150mW Output Amplifier of Potable Radios in Class

B Push-pull Operation.

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: J3

C

C

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

BE

1. BASE

C

2. EMITTER

C

3. COLLECTOR

BACK

EB

J3

BE

MAXIMUM RATINGS TA=25℃ unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Dissipation

TJ

Junction Temperature

Tstg

Storage Temperature

Value

40

25

5

500

150

150

-55-150

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Test conditions

IC= 100µA, IE=0

IC=1mA, IB=0

IE=100µA IC=0

VCB=40 V,IE=0

VCE=20V,IB=0

VEB= 5V,IC=0

VCE=1V,IC=50mA

VCE=1V,IC=500mA

IC=500mA,IB= 50mA

IC=500mA,IB= 50mA

VCE=6V, IC= 20mA

f=30MHz

VCB=6V,IE=0,f=1MHz

MIN

40

25

5

120

40

150

TYP

Units

V

V

V

mA

mW

℃

℃

MAX

0.1

0.1

0.1

400

UNIT

V

V

V

µA

µA

µA

0.6

V

1.2

V

MHz

8

pF

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