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SA58637BS,118 查看數據表(PDF) - NXP Semiconductors.

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SA58637BS,118
NXP
NXP Semiconductors. NXP
SA58637BS,118 Datasheet PDF : 22 Pages
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NXP Semiconductors
SA58637
2 × 2.2 W BTL audio amplifier
14.2 BTL dynamic characterization
The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 8)
was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the
behavior of PSRR at low frequencies; increasing the value of C3 increases the
performance of PSRR.
10
THD+N
(%)
1
101
002aac083
(1)
(2)
102
10
102
103
Po = 0.5 W; Gv = 20 dB.
(1) VCC = 6 V; RL = 8 .
(2) VCC = 7.5 V; RL = 16 .
104
105
f (Hz)
Fig 8. Total harmonic distortion-plus-noise as a
function of frequency
20
PSRR
(dB)
40
60
αcs
(dB)
70
80
90
002aac084
(1)
(2)
(3)
100
10
102
103
104
105
f (Hz)
VCC = 6 V; VO = 2 V; RL = 8 .
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 9. Channel separation as a function of frequency
002aac085
(1)
(2)
60
(3)
80
10
102
103
104
105
f (Hz)
VCC = 6 V; RS = 0 ; Vripple = 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 10. Power supply rejection ratio as a function of frequency
SA58637_1
Product data sheet
Rev. 01 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
11 of 22

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