SA8027W 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

生产厂家

SA8027W

2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer

Philips Electronics 

Philips Semiconductors

2.5 GHz low voltage, low power

RF fractional-N/IF integer frequency synthesizer

Product data

SA8027

CHARACTERISTICS (continued)

SYMBOL

PARAMETER

CONDITIONS

MIN.

Phase noise (condition RSET = 7.5 kΩ, CP = 00)

Synthesizer’s contribution to close-in phase noise

GSM

–

of 900 MHz RF signal at 1 kHz offset.

fREF = 13MHz, TCXO,

Synthesizer’s contribution to close-in phase noise fCOMP = 1MHz

–

of 1800 MHz RF signal at 1 kHz offset.

indicative, not tested

L(f)

Synthesizer’s contribution to close-in phase noise

TDMA

–

of 800 MHz RF signal at 1 kHz offset.

fREF = 19.44MHz, TCXO,

Synthesizer’s contribution to close-in phase noise fCOMP = 240kHz

–

of 2100 MHz RF signal at 1 kHz offset.

indicative, not tested

Interface logic input signal levels

VIH

HIGH level input voltage

VIL

LOW level input voltage

ILEAK

Input leakage current

Lock detect output signal (in push/pull mode)

logic 1 or logic 0

0.7*VDD

–0.3

–0.5

VOL

LOW level output voltage

Isink = 2 mA

–

VOH

HIGH level output voltage

Isource = –2 mA

VDD–0.4

NOTES:

1.

ISET

+

VSET

RSET

bias

current

for

charge

pumps

2. The relative output current variation is defined as:

DIOUT

IOUT

+

2

(I2

|I2

*

)

I1)

I1|

;

with

I1 @

V1

+

0.6

V,

I2 @

V2

+

VDDCP –0.7

V (See Figure 5.)

TYP.

–90

–83

–85

–77

–

–

–

–

–

MAX.

UNIT

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

VDD+0.3

V

0.3*VDD

V

+0.5

µA

0.4

V

–

V

IZOUT

CURRENT

I2

I1

2001 Aug 21

VOLTAGE

V1

V2

VPH

I2

I1

Figure 5. Relative Output Current Variation

SR00602

7

Share Link: