SB160H 查看數據表（PDF） - Sirectifier Global Corp.
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SB160H Datasheet PDF : 3 Pages
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SB140H ~ SB1200H
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (ºC)
Figure 1. Forward Current Derating Curve
100
10
1
SB140H – SB160H
0.1
0.01
SB1100H – SB1200H
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Figure 3. Typical Reverse Characteristics
1000
40
30
20
10
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
Figure 2. Maximum Non-repetitive Surge Current
100
10
1.0
SB140SHB160H
SB1100H SB1150H SB1200H
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Figure 4. Typical Forward Characteristics
100
TJ = 25ºC
f = 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE, VOLTS
Figure 5. Typical Junction Capacitance
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com
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2
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