SBL3030PT-E3 查看數據表（PDF） - Vishay Semiconductors
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SBL3030PT-E3 Datasheet PDF : 4 Pages
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SBL3030PT & SBL3040PT
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL3030PT
SBL3040PT
Thermal resistance from junction to case per diode
RθJC
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
SBL3030PT-E3/45
6.13
PACKAGE CODE BASE QUANTITY DELIVERY MODE
45
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
Resistive or Inductive Load
24
18
12
6
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
TJ = 125 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
300
250
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TJ = 125 °C
10
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88732
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 25-Mar-08
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