SD103AX 查看數據表（PDF） - Galaxy Semi-Conductor
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SD103AX Datasheet PDF : 3 Pages
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Schottky Barrier Diode
FEATURES
Low forward voltage drop.
Pb
Lead-free
Guard ring construction for transient protection.
Low reverse recovery time.
Low reverse capacitance.
Production specification
SD103AX
APPLICATIONS
Schottky barrier application.
SOD-523
ORDERING INFORMATION
Type No.
Marking
SD103AX
S4
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC Reverse voltage
VR
40
V
Continuous forward current
IF
350
mA
Repetitive peak forward current @t≤1.0s
IFRM
1
A
Total power dissipation
Ptot
200
mW
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-65 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min.
V(BR)R
40
VF
IR
Cd
trr
Typ. Max. Unit
V
0.37
0.60
V
5.0 μA
50
pF
10
ns
Conditions
IR=100μA
IF=20mA
IF=200mA
VR=30V
VR=0V,f=1MHz
IF=IR=50mA,RL=100Ω
H012
Rev.A
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