SD2931-10W 查看數據表（PDF） - STMicroelectronics

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SD2931-10W

RF power transistor: HF/VHF/UHF N-channel power MOSFETs

STMicroelectronics 

SD2931-10

RF power transistor:

HF/VHF/UHF N-channel power MOSFETs

Datasheet - production data

• POUT = 150 W min. with 14 dB gain @ 175 MHz

• Thermally enhanced packaging for lower

junction temperatures

M174

Epoxy sealed

Figure 1. Pin connection

4

1

Description

The SD2931-10 is a gold metalized N-channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50 V dc large

signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25% lower thermal resistance),

representing the best-in-class transistors for ISM

applications, where reliability and ruggedness are

critical factors.

3

1. Drain

2. Source

2

3. Gate

4. Source

Features

• Gold metalization

• Excellent thermal stability

• Common source configuration

Order code

Marking

Table 1. Device summary

Base qty.

Package

SD2931-10W

SD2931-10

25 pcs

M174

1. For more details please refer to Chapter 11: Marking, packing and shipping specifications.

July 2016

This is information on a product in full production.

DocID7076 Rev 10

Packaging(1)

Plastic tray

1/19

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