SD30 查看數據表（PDF） - Sirectifier Electronics
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SD30 Datasheet PDF : 2 Pages
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SD30
Discrete Diodes
50
A
40
IF
30
20
10
TVJ=150°C
TVJ= 25°C
250
50Hz, 80% VRRM
A
IFSM200
TVJ = 45°C
150
100
TVJ = 150°C
50
103
A2s VR = 0 V
I2t
TVJ = 45°C
TVJ = 150°C
0
0.0
0.4
0.8
1.2 V 1.6
VF
Fig. 1 Forward current versus voltage
drop per diode
60
W
Ptot
40
20
0
0.001
0.01
0.1 s 1
t
Fig. 2 Surge overload current
RthHA :
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
102
1
2 3 4 5 6 7 8ms910
t
Fig. 3 I2t versus time per diode
35
A
30
IF(AV)M
25
20
15
10
5
0
0
10
20
30 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
1.2
K/W
1.0
ZthJC
0.8
0
0 20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus
case temperature
0.6
0.4
0.2
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
Constants for ZthJC calculation:
i
1
2
3
4
5
1
s
10
t
Rthi (K/W)
0.01362
0.1962
0.267
0.3052
0.218
ti (s)
0.0001
0.00316
0.023
0.4
0.15
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