SD400N 查看數據表（PDF） - Vishay Semiconductors
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SD400N Datasheet PDF : 7 Pages
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SD400N/R Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 400 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
IF(RMS)
IFSM
I2t
I2√t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
DC at 110 °C case temperature
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
VALUES
400
120
480
100
630
8250
8640
6940
7270
340
311
241
220
3400
0.80
0.85
0.55
0.51
1.62
UNITS
A
°C
A
°C
A
kA2s
kA2√s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
VALUES
- 40 to 190
- 55 to 200
0.11
0.04
UNITS
°C
K/W
27
Nm
250
g
DO-205AB (DO-9)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93548
Revision: 17-Apr-08
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