SDD320N16 查看數據表（PDF） - Sirectifier Electronics
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SDD320N16 Datasheet PDF : 4 Pages
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SDD320
Diode-Diode Modules
Symbol
Test Conditions
IRRM
VF
VTO
rT
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM
IF=600A; TVJ=25oC
For power-loss calculations only
TVJ=TVJM
TVJ=125oC; IF=400A; -di/dt=50A/us
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
40
1.2
0.75
0.63
760
275
0.129
0.065
0.169
0.0845
12.7
9.6
50
Unit
mA
V
V
m
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
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