SFH309P 查看數據表（PDF） - Siemens AG

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SFH309P

Silicon NPN Phototransistor

Siemens AG 

Bezeichnung

Description

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

SFH 309 P:

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = 20 µA , Ee = 0.5 mW/cm2

SFH 309 P

SFH 309 PFA

Symbol

Symbol

Wert

Value

IPCE

IPCE

tr, tf

VCEsat

≥ 63

420

≥6

150

Einheit

Unit

µA

µA

µs

mV

Directional characteristics Srel = f (ϕ)

Semiconductor Group

4

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